H3950 datasheet(1/1 Pages) HUASHAN

Part #	H3950

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

High-definition CRT display video output，wide-band amplifier.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

ICBO

Collector Cut-off Current

0.1

μA

VCB=20V, IE=0

IEBO

Emitter Cut-off Current

5

μA

VEB=2V, IC=0

HFE（1） DC Current Gain

40

200

VCE=5V, IC=50mA

HFE（2） DC Current Gain

20

VCE=5V, IC=500mA

VCE(sat) Collector- Emitter Saturation Voltage

0.3

0.8

V

IC=300mA, IB=30mA

VBE(sat) Base-Emitter Saturation Voltage

0.9

1.2

V

IC=300mA, IB=30mA

fT

Current Gain-Bandwidth Product

2.0

GHz

VCE=5V,IC=100mA，

Cob

Output Capacitance

6.0

pF

VCB=10V, f=1MHz

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hFE Classification

C

D

E

40—80

60—120

100—200

NPN SILICON TRANSISTOR

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature……………………………… 150℃

PC——Collector Dissipation（TC=25℃）…………………… 5W

PC——Collector Dissipation（TA=25℃）………………… 1.3W

VCBO——Collector-Base Voltage………………………… 30V

VCEO——Collector-Emitter Voltage……………………… 20V

VEBO——Emitter-Base Voltage……………………………… 3V

IC——Collector Current……………………………………500mA

H3950

TO-126ML

1―Emitter，E

2―Collector，C

3―Base，B

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