H3203 datasheet(1/1 Pages) HUASHAN

Part #	H3203

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

HIGH CURRENT APPLICATIONS.

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

BVCBO

Collector-Base Breakdown Voltage

３５　

Ｖ　

IC=100μA,

IE=0

BVCEO

Collector-Emitter Breakdown Voltage

３０　

Ｖ　

IC=10mA,

IB=0　

BVEBO

Emitter- Base Breakdown Voltage

５　

Ｖ　

IE=1mA，IC=0

HFE（1）　 DC Current Gain　

１００　

３２０　

VCE=1V, IC=100mA　

HFE（2）　 DC Current Gain　

３５　

VCE=1V, IC=700mA　

VCE(sat)　

Collector- Emitter Saturation Voltage　

０．５　

Ｖ　

IC=500mA, IB=20mA 　

VBE　

Base-Emitter Voltage　

０５　

０．８　

Ｖ　

VCE=1V, IC=10mA　

ICBO

Collector Cut-off Current

１００　

ｎＡ　 VCB=35V, IE=0

IEBO

Emitter Cut-off Current

１００　

ｎＡ　 VEB=5V, IC=0

fT

Current Gain- Bandwidth Product

１２０　

ＭＨｚ　 VCE=5V, IC=10mA

Cob

Output Capacitance

１３　

ｐＦ　 VCB=10V, IE=0，f=1ＭＨｚ

█ HFE Classification

O

Y

　　　　１００—２００　　

　　　　　　　　　　　　　１６０—３２０　　

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………625mW

VCBO——Collector-Base Voltage………………………………35V

VCEO——Collector-Emitter Voltage……………………………30V

VEBO ——Emitter -Base Voltage………………………………5V

I C——Collector Current …………………………………… 800mA

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

H3203

NPN S I L I C O N T R A N S I S T O R

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