DG641/642/643

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

4-4

Document Number: 70058

S-52433—Rev. E, 06-Sep-99

SPECIFICATIONS FOR DG642

Test Conditions

Unless Otherwise Specified

Limits

–40 to 85

_C

Parameter

Symbol

V+ = 15 V, V– = –3 V

Unit

Analog Switch

V– = –5 V, V+ = 12 V

Full

–5

8

V

V– = GND, V+ = 12 V

Full

0

8

V

Drain-Source On-Resistance

Room

Full

5

8

9

W

S

,

D

Room

0.5

1

Source Off Leakage Current

Room

Full

–10

–200

–0.04

10

200

A

Drain Off Leakage Current

Room

Full

–10

–200

–0.04

10

200

nA

Channel On Leakage Current

Room

Full

–10

–200

–0.2

10

200

Digital Control

Input Voltage High

Full

2.4

V

Input Voltage Low

Full

0.8

V

Input Current

Room

Full

–1

–20

0.05

1

20

mA

Dynamic Characteristics

Room

19

40

F

Room

8

20

pF

Room

8

20

Bandwidth

BW

Room

500

MHz

Turn On Time

Room

Full

60

100

160

ns

Turn Off Time

Room

Full

40

60

100

ns

Charge Injection

Q

Room

–40

pC

Off Isolation

See Figure 4

Room

–63

dB

All Hostile Crosstalk

See Figure 5

Room

–85

dB

Power Supplies

Positive Supply Current

I+

Room

Full

3.5

6

9

mA

Negative Supply Current

I–

Room

Full

–6

–9

–3

mA

Notes:

a.

Room = 25

_C, Full = as determined by the operating temperature suffix.

b.

The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

c.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d.

Guaranteed by design, not subject to production test.

e.