PSIG50-06 datasheet(1/4 Pages) POWERSEM

Part #	PSIG50-06

Description	IGBT Module

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Manufacturer	POWERSEM [Powersem GmbH]

Direct Link	http://www.powersem.com

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IGBT Module

I

C25

= 42.5 A

V

CES

= 600 V

V

CE(sat)typ. = 2.4 V

Features

•

Package with DCB ceramic base plate

•

Isolation voltage 3000 V∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

UL registered, E 148688

Applications

•

AC and DC motor control

•

AC servo and robot drives

•

power supplies

•

welding inverters

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

High power density

•

Small and light weight

•

Leads with expansion bend for

stress relief

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PACTM 2

Preliminary Data Sheet

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSIG 50/06

PSI

50/06*

PSIS 50/06*

PSSI 50/06*

PSSI

PSIS

PSIS 50/06*

PSIG 50/06

PSSI 50/06*

PSIG

*NTC optional

Short Circuit SOA Capability

Square RBSOA

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

600

V

GES

± 20

V

I

C25

T

C = 25°C

42.5

A

I

C80

T

C = 80°C

29

A

I

CM

V

GE = ±15 V; RG = 33 Ω; TVJ = 125°C

60

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

130

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 50 A; VGE = 15 V; TVJ =

25°C

2.4

2.9

V

T

VJ = 125°C

2.9

V

GE(th)

I

C = 0.7 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;

V

GE = 0 V;

T

VJ =

25°C

0.6

mA

T

VJ = 125°C

1.7

mA

I

GES

V

CE = 0 V; VGE =

± 20 V

100

nA

t

d(on)

50

ns

t

r

50

ns

t

d(off)

270

ns

t

f

40

ns

E

on

1.4

mJ

E

off

1.0

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

16

nF

R

thJC

(per IGBT)

0.96 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

1.92

K/W

Inductive load, T

VJ = 125°C

V

CE = 300 V; IC = 30 A

V

GE = 15/0 V; RG = 33 Ω

PSI 50/06*

G H 1 0

V X 1 8

K 1 0

X 1 6

N T C

E 2

L 9

O P 9

X 1 3

X 1 5

PSI

IK 1 0

R S 18

A C 1

L 9

F 1

X 1 5

X 1 6

N T C

T 1 6

L 9

X 1 6

N T C

X 15

IK 1 0

R S 1 8

A C 1

A1

JK 10

S18

LN 9

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