POWERSEM GmbH, Walpersdorfer Str. 53

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

Powerline N-Channel

PSTG 25HDT12

Trench Gate-

= 1200 V

IGBT Module

= 1.9 V

= 35 A

= 25 A

= 75 A

= 10 µs

Symbol Test Conditions

Maximum Ratings

1200

V

continous

±20

V

35

A

25

A

75

A

45

W

10

µs

-40...+150

°C

-40...+125

°C

IGBT-per devices

1.65

K/W

Diode-per devices

4.0

K/W

180° sine

3000

V~

Mounting torque (M4)

1.5-1.8

Nm

typ.

min.

Creepage distance on surface

11.2

mm

Strike distance through air

4.0

mm

Weight

typ.

16

g

Features

• Package with DCB ceramic base

plate and soldering pins for PCB

mounting

• Isolation voltage over 3000 V∼

• Trench Gate

• Enhancement Mode N-Channel

Device

• Non Punch through Structure

• High Switching Speed

• Low On-state Saturation Voltage

• High Input Impedance Simplifies

Gate Drive

• Latch-Free Operation

• Fully Short Circuit Rated to 10 µs

• Wide RBSOA

Applications

• High Frequency Inverters

• Motor Control

• Switch Mode Power Supplies

• High Frequency Welding

• UPS Systems

• PWM Drives

Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling

precautions.

MB

H

C

L N

A

G

NTC

Preliminary Data Sheet