PSBZ 50

POWERSEM GmbH, Walpersdorfer Str. 53

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

0.1

1

10

10

10

10

10

10

01

23

4

mA

V

1

2

3

4

5

6

Fig.4 Gate trigger characteristic

50

100

150

200

0

10

20

30

40

50

60

70

DC

sin.180°

rec.120°

rec.60°

rec.30°

T (°C)

C

ITAV

[A]

Fig.5 Maximum forward current

at case temperature

Fig.6 Transient thermal impedance per thyristor or diode

(calculated)

0.01

0.1

1

10

0.2

0.4

0.6

0.8

1

1.2

K/W

Z th

t[s]

Z thJK

Z thJC

Fig. 7 Power dissipation vs. direct output current and ambient

temperature

50

30

10

0

25

50

75

100

125

150

175

200

80

85

90

95

100

105

110

115

120

125

TC

°C

DC

sin.180°

rec.120°

rec.60°

rec.30°

2.27

1.02

0.61

0.4

0.28 0.15 = RTHCA [K/W]

ITAVM

[A]

Tamb

[K]

0

50

100

150

[W]

PVTOT

PSBZ50