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H55S2562JFR-75M Datasheet(PDF) 11 Page - Hynix Semiconductor |
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H55S2562JFR-75M Datasheet(HTML) 11 Page - Hynix Semiconductor |
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11 / 52 page  Rev 1.1 / July. 2009 11 11 256Mbit (16Mx16bit) Mobile SDR H55S2562JFR Series DC CHARACTERISTICS II (TA= -30 to 85oC) Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open. 2. See the tables of next page for more specific IDD6 current values. Parameter Symbol Test Condition Speed Unit Note 166MHz 133MHz 105MHz Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA 50 40 40 mA 1 Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = min 0.3 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 0.3 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 5 mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 1 Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK = min 3 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 3 Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 10 mA IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 5 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 55 45 45 mA 1 Auto Refresh Current IDD5 tRFC ≥ tRFC(min), 70 mA Self Refresh Current IDD6 CKE ≤ 0.2V See Next Page mA 2 Standby Current in Deep Power Down Mode IDD7 See p.50~51 10 uA 3 |
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