Rev. 1.0 / July. 2008

8

Release

H5PS5162FFR series

2. Maximum DC Ratings

2.1 Absolute Maximum DC Ratings

2.2 Operating Temperature Condition

Symbol

Parameter

Rating

Units

Notes

VDD

Voltage on VDD pin relative to Vss

- 1.0 V ~ 2.3 V

V

1

VDDQ

Voltage on VDDQ pin relative to Vss

- 0.5 V ~ 2.3 V

V

1

VDDL

Voltage on VDDL pin relative to Vss

- 0.5 V ~ 2.3 V

V

1

- 0.5 V ~ 2.3 V

V

1

Storage Temperature

-55 to +100

℃

1, 2

Input leakage current; any input 0V VIN VDD;

all other balls not under test = 0V)

-2 uA ~ 2 uA

uA

Output leakage current; 0V VOUT VDDQ; DQ

and ODT disabled

-5 uA ~ 5 uA

uA

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement

conditions. Please refer to JESD51-2 standard.

Symbol

Parameter

Rating

Units

Notes

tOPER

Operating Temperature

Normal Temp

0 to 95

°C

1,2

Industrial Temp

-40 to 85

°C

1,2

1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-

ment conditions, please refer to JESD51-2 standard.

2. At tOPER 85~95℃, Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-

perature range it must be required an EMRS command to change itself refresh rate.