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H5MS5122DFR Datasheet(PDF) 5 Page - Hynix Semiconductor |
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H5MS5122DFR Datasheet(HTML) 5 Page - Hynix Semiconductor |
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5 / 62 page  Rev 1.2 / Jul. 2008 5 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series The Hynix H5MS5122DFR series has the special Low Power function of Auto TCSR (Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implemented, it enables to automatically adjust refresh rate according to temperature without external EMRS command. Deep Power Down Mode is an additional operating mode for Low Power DDR SDRAM (Mobile DDR SDRAM). This mode can achieve maximum power reduction by removing power to the memory array within Low Power DDR SDRAM (Mobile DDR SDRAM). By using this feature, the system can cut off almost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout flexibility. All inputs are LVCMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal). The Hynix H5MS5122DFR series is available in the following package: - 90Ball FBGA [size: 8mm x 13mm, t=1.0mm max] 512M Mobile DDR SDRAM ORDERING INFORMATION Part Number Clock Frequency Page Size Organization Interface Package H5MS5122DFR-E3M 200MHz(CL3) / 83MHz(CL2) 2KByte (Normal) 4banks x 4Mb x 32 LVCMOS 90 Ball FBGA Lead & Halogen Free H5MS5122DFR-J3M 166MHz(CL3) / 83MHz(CL2) H5MS5122DFR-K3M 133MHz(CL3) / 83MHz(CL2) H5MS5122DFR-L3M 100MHz(CL3) / 66MHz(CL2) H5MS5132DFR-E3M 200MHz(CL3) / 83MHz(CL2) 1KByte (Reduced) H5MS5132DFR-J3M 166MHz(CL3) / 83MHz(CL2) H5MS5132DFR-K3M 133MHz(CL3) / 83MHz(CL2) H5MS5132DFR-L3M 100MHz(CL3) / 66MHz(CL2) |
Similar Part No. - H5MS5122DFR |
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