HYMD212G726BLS4M-L datasheet(9/17 Pages) HYNIX

Part #	HYMD212G726BLS4M-L

Description	Low Profile Registered DDR SDRAM DIMM

Download	17 Pages

Scroll/Zoom	100%

Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

Logo

9 / 17 page

HYMD212G726B(L)S4M-M/K/H/L

Rev. 0.1 / Dec. 2003

9

DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS=0V)

Parameter

Symbol

Test Condition

Speed

Unit Note

-M

-K

-H

-L

Operating Current

IDD0

One bank; Active - Precharge; tRC=tRC(min);

tCK= tCK(min); DQ,DM and DQS inputs changing

twice per clock cycle; address and control inputs

changing once per clock cycle

3530

3290

3050

mA

Operating Current

IDD1

One bank; Active - Read - Precharge; Burst

Length =2; tRC=tRC(min); tCK=tCK(min);

address and control inputs changing once per

clock cycle

3530

3290

3050

mA

Precharge Power

Down Standby Current

IDD2P

All banks idle; Power down mode; CKE=Low,

tCK=tCK(min)

970

mA

Idle Standby Current

IDD2F

/CS=High, All banks idle; tCK=tCK(min); CKE=

High; address and control inputs changing once

per clock cycle. VIN=VREF for DQ, DQS, and DM

2250

2090

1930

mA

Active Power Down

Standby Current

IDD3P

One bank active; Power down mode; CKE=Low,

tCK=tCK(min)

1130

mA

Active Standby Current

IDD3N

/CS=HIGH, CKE=HIGH; One bank; Active-

Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,

DM and DQS inputs changing twice per clock

cycle; Address and other control inputs changing

once per clock cycle

2570

2410

2250

mA

Operating Current

IDD4R

Burst=2; Reads; Continuous burst; One bank

active; Address and control inputs changing once

per clock cycle; tCK=tCK(min); IOUT=0mA

4330

3930

3690

mA

Operating Current

IDD4W

Burst=2; Writes; Continuous burst; One bank

active; Address and control inputs changing once

per clock cycle; tCK=tCK(min); DQ, DM, and DQS

inputs changing twice per clock cycle

6770

5870

4790

Auto Refresh Current

IDD5

tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,

10*tCK for DDR266A & DDR266B at 133Mhz;

distributed refresh

4190

3950

3710

Self Refresh Current

IDD6

CKE=<0.2V; External clock on;

tCK =tCK(min)

Normal

446

mA

Low Power

398

mA

Operating Current -

Four Bank Operation

IDD7

Four bank interleaving with BL=4 Refer to the

following page for detailed test condition

5630

5390

5150

mA

Similar Part No. - HYMD212G726BLS4M-L

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HYMD212G726ALS4-H	267Kb / 16P	Registered DDR SDRAM DIMM
	HYMD212G726ALS4-K	267Kb / 16P	Registered DDR SDRAM DIMM
	HYMD212G726ALS4-L	267Kb / 16P	Registered DDR SDRAM DIMM
	HYMD212G726ALS4-M	267Kb / 16P	Registered DDR SDRAM DIMM
	HYMD212G726ALS4M-H	235Kb / 16P	Low Profile Registered DDR SDRAM DIMM

More results

Similar Description - HYMD212G726BLS4M-L

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HYMD232G726BL8M-M	154Kb / 17P	Low Profile Registered DDR SDRAM DIMM
	HYMD525G726AS4M-M	304Kb / 17P	Low Profile Registered DDR SDRAM DIMM
	HYMD264G726BL8M-M	146Kb / 16P	Low Profile Registered DDR SDRAM DIMM
	HYMD264G726A8M-M	200Kb / 16P	Low Profile Registered DDR SDRAM DIMM
	HYMD264G726BL4M-M	160Kb / 17P	Low Profile Registered DDR SDRAM DIMM
	HYMD564G726A8M-M	264Kb / 16P	Low Profile Registered DDR SDRAM DIMM
	HYMD132G725B4M-M	232Kb / 16P	Low Profile Registered DDR SDRAM DIMM
	HYMD132G725EL4M-M	166Kb / 17P	Low Profile Registered DDR SDRAM DIMM
	HYMD212G726AS4M-M	235Kb / 16P	Low Profile Registered DDR SDRAM DIMM
	HYMD132G725B8M-M	258Kb / 17P	Low Profile Registered DDR SDRAM DIMM

More results

HYMD212G726BLS4M-L Datasheet(PDF) 9 Page - Hynix Semiconductor

HYMD212G726BLS4M-L Datasheet(HTML) 9 Page - Hynix Semiconductor

Similar Part No. - HYMD212G726BLS4M-L

Similar Description - HYMD212G726BLS4M-L

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL