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HYMD232G726BL8M-M Datasheet(PDF) 9 Page - Hynix Semiconductor |
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HYMD232G726BL8M-M Datasheet(HTML) 9 Page - Hynix Semiconductor |
9 / 17 page HYMD232G726B(L)8M-M/K/H/L Rev. 0.2 / Dec. 2003 9 DC CHARACTERISTICS II (TA=0 to 70 oC, Voltage referenced to VSS = 0V) Parameter Symbol Test Condition Speed Unit Note -M -K -H -L Operating Current IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 1730 1640 1640 1550 mA Operating Current IDD1 One bank; Active - Read - Precharge; Burst Length =2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 1730 1640 1640 1550 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 740 mA Idle Standby Current IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE=High ; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 1100 1055 1055 1010 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 785 mA Active Standby Current IDD3N /CS=HIGH; CKE=HIGH; One bank; Active- Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 1190 1145 1145 1100 mA Operating Current IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 2180 2000 2000 1910 mA Operating Current IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM, and DQS inputs changing twice per clock cycle 2270 2180 2180 2090 Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh 1970 1880 1880 1790 Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK =tCK(min) Normal 377 mA Low Power 363.5 mA Operating Current - Four Bank Operation IDD7 Four bank interleaving with BL=4 Refer to the following page for detailed test condition 3080 2990 2990 2900 mA |
Similar Part No. - HYMD232G726BL8M-M |
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Similar Description - HYMD232G726BL8M-M |
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