This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.3/May. 02

1

16Mx72 bits

Registered DDR SDRAM DIMM

HYMD116G725B(L)8-M/K/H/L

DESCRIPTION

Hynix HYMD116G725B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725B(L)8-M/

K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix

HYMD116G725B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry

standard. It is suitable for easy interchange and addition.

Hynix HYMD116G725B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous

operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control

inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on

both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high

bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable

latencies and burst lengths allow variety of device operation in high performance memory system.

Hynix HYMD116G725B(L)8-M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is

implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify

DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.

FEATURES

•

128MB (16M x 72) Registered DDR DIMM based on

16Mx8 DDR SDRAM

•

JEDEC Standard 184-pin dual in-line memory module

(DIMM)

•

Error Check Correction (ECC) Capability

•

Registered inputs with one-clock delay

•

Phase-lock loop (PLL) clock driver to reduce loading

•

2.5V +/- 0.2V VDD and VDDQ Power supply

•

All inputs and outputs are compatible with SSTL_2

interface

•

Fully differential clock operations (CK & /CK) with

100MHz/125MHz/133MHz

•

Programmable CAS Latency 2 / 2.5 supported

•

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

•

tRAS Lock-out function supported

•

Internal four bank operations with single pulsed RAS

•

Auto refresh and self refresh supported

•

4096 refresh cycles / 64ms

ORDERING INFORMATION

Part No.

Power Supply

Clock Frequency

Interface

Form Factor

HYMD116G725B(L)8-M

133MHz (*DDR266:2-2-2)

SSTL_2

184pin Registered DIMM

5.25 x 1.7 x 0.15 inch

HYMD116G725B(L)8-K

133MHz (*DDR266A)

HYMD116G725B(L)8-H

133MHz (*DDR266B)

HYMD116G725B(L)8-L

125MHz (*DDR200)

* JEDEC Defined Specifications compliant