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H5TQ2G43BFR Datasheet(PDF) 11 Page - Hynix Semiconductor |
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H5TQ2G43BFR Datasheet(HTML) 11 Page - Hynix Semiconductor |
11 / 35 page Rev. 0.2 / Feb. 2010 11 Absolute Maximum Ratings Absolute Maximum DC Ratings DRAM Component Operating Temperature Range AC & DC Operating Conditions Absolute Maximum DC Ratings Symbol Parameter Rating Units Notes VDD Voltage on VDD pin relative to Vss - 0.4 V ~ 1.975 V V 1,3 VDDQ Voltage on VDDQ pin relative to Vss - 0.4 V ~ 1.975 V V 1,3 VIN, VOUT Voltage on any pin relative to Vss - 0.4 V ~ 1.975 V V 1 TSTG Storage Temperature -55 to +100 o C1, 2 Notes: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat- ing conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than 0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV. Temperature Range Symbol Parameter Rating Units Notes TOPER Normal Operating Temperature Range 0 to 85 o C 1,2 Extended Temperature Range (Optional) 85 to 95 o C1,3 Notes: 1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure- ment conditions, please refer to the JEDEC document JESD51-2. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur- ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions. 3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply: a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range. Please refer to the DIMM SPD for option availability b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). |
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