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TK50X15J1 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TK50X15J1
Description  Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS??
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TK50X15J1 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TK50X15J1
2009-09-29
4
160
40
80
120
0
0
16
4
8
12
VDD = 30 V
60
VGS
VDS
40
60
80
100
20
120
30
60
120
14
2
6
10
140
20
60
100
0
5
1
3
2
4
0
−80
0
40
120
160
200
−40
80
0.1
100
−0.2
0
−1.2
−0.6
−0.4
−1
10
1
10
3
1
5
−0.8
VGS = 0 V
0
80
20
40
60
−40
−80
200
0
40
80
12
25
160
ID = 50 A
120
Case temperature
Tc (°C)
RDS (ON) − Tc
Drain-source voltage VDS (V)
IDR − VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Case temperature Tc (°C)
Vth − Tc
Case temperature
Tc (°C)
PD − Tc
Total gate charge Qg (nC)
Dynamic input/output characteristics
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Common source
Tc
= 25°C
Pulse test
Common source
VGS = 10 V
Pulse test
Common source
ID = 50 A
Tc
= 25°C
Pulse test
100
10000
1000
1
0.1
100
10
Ciss
Coss
Crss
10
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
160
80
0
0
50
100
200
40
120
150


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