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TK50X15J1 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK50X15J1 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TK50X15J1 2009-09-29 4 160 40 80 120 0 0 16 4 8 12 VDD = 30 V 60 VGS VDS 40 60 80 100 20 120 30 60 120 14 2 6 10 140 20 60 100 0 5 1 3 2 4 0 −80 0 40 120 160 200 −40 80 0.1 100 −0.2 0 −1.2 −0.6 −0.4 −1 10 1 10 3 1 5 −0.8 VGS = 0 V 0 80 20 40 60 −40 −80 200 0 40 80 12 25 160 ID = 50 A 120 Case temperature Tc (°C) RDS (ON) − Tc Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth − Tc Case temperature Tc (°C) PD − Tc Total gate charge Qg (nC) Dynamic input/output characteristics Common source VDS = 10 V ID = 1 mA Pulse test Common source Tc = 25°C Pulse test Common source VGS = 10 V Pulse test Common source ID = 50 A Tc = 25°C Pulse test 100 10000 1000 1 0.1 100 10 Ciss Coss Crss 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 160 80 0 0 50 100 200 40 120 150 |
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