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HMT125S6BFR8C-G7 Datasheet(PDF) 44 Page - Hynix Semiconductor

Part # HMT125S6BFR8C-G7
Description  204pin DDR3 SDRAM SODIMMs
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HMT125S6BFR8C-G7 Datasheet(HTML) 44 Page - Hynix Semiconductor

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Rev. 0.5 / Sep. 2009
44
HMT164S6BFR6C
HMT112S6BFR6C
HMT125S6BFR8C
*Speed Bin Table Notes*
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
DDR3 1333 Speed Bin
DDR3-1333H
Unit
Note
CL - nRCD - nRP
9-9-9
Parameter
Symbol
min
max
Internal read command to
first data
tAA
13.5
20
ns
ACT to internal read or write
delay time
tRCD
13.5
ns
PRE command period
tRP
13.5
ns
ACT to ACT or REF command
period
tRC
49.5
ns
ACT to PRE command period
tRAS
36
9 * tREFI
ns
CL = 5
CWL = 5
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 6, 7
tCK(AVG)
Reserved
ns
4
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3,7
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 7
tCK(AVG)
Reserved
ns
4
CL = 7
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,4,7
(Optional)
Note 9.10
CL = 8
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 9
CWL = 5, 6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,4
CL = 10
CWL = 5, 6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3
(Optional)
ns
5
Supported CL Settings
6, 7, 8, 9
nCK
Supported CWL Settings
5, 6, 7
nCK


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