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HMT125S6BFR8C-G7 Datasheet(PDF) 30 Page - Hynix Semiconductor |
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HMT125S6BFR8C-G7 Datasheet(HTML) 30 Page - Hynix Semiconductor |
30 / 51 page Rev. 0.5 / Sep. 2009 30 HMT164S6BFR6C HMT112S6BFR6C HMT125S6BFR8C Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements [Note: DIMM level Output test load condition may be different from above] Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement VDD DDR3 SDRAM VDDQ RESET CK/CK DQS, DQS CS RAS, CAS, WE A, BA ODT ZQ VSS VSSQ DQ, DM, TDQS, TDQS CKE RTT = 25 Ohm VDDQ/2 IDD IDDQ (optional) Application specific memory channel environment Channel IO Power Simulation IDDQ Simulation IDDQ Simulation Channel IO Power Number IDDQ Test Load Correction |
Similar Part No. - HMT125S6BFR8C-G7 |
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Similar Description - HMT125S6BFR8C-G7 |
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