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PESD24VS2UQ Datasheet(PDF) 5 Page - NXP Semiconductors |
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PESD24VS2UQ Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 5 of 13 NXP Semiconductors PESDxS2UQ series Double ESD protection diodes in SOT663 package [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured across either pins 1 and 3 or pins 2 and 3. Cd diode capacitance f = 1 MHz; VR =0V PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF PESD24VS2UQ - 23 50 pF VCL clamping voltage [1][2] PESD3V3S2UQ IPP =1A - - 8 V IPP =15A - - 20 V PESD5V0S2UQ IPP =1A - - 9 V IPP =15A - - 20 V PESD12VS2UQ IPP =1A - - 19 V IPP =5A - - 35 V PESD15VS2UQ IPP =1A - - 23 V IPP =5A - - 40 V PESD24VS2UQ IPP =1A - - 36 V IPP =3A - - 70 V rdif differential resistance PESD3V3S2UQ IR =5 mA - - 40 Ω PESD5V0S2UQ IR =5 mA - - 15 Ω PESD12VS2UQ IR =5 mA - - 15 Ω PESD15VS2UQ IR =1 mA - - 225 Ω PESD24VS2UQ IR =0.5 mA - - 300 Ω Table 8. Characteristics …continued Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
Similar Part No. - PESD24VS2UQ |
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