 |
 |
|
| HYMD232726D8-H |
|
|||||||||||||||||
 HYNIX
|
| |||||||||||||||||
|
11 page 
Rev. 1.2 / May. 2005 11 1184pin Unbuffered DDR SDRAM DIMMs IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) 256MB, 32Mb x 64 Unbuffered DIMM: HYMD232646D[P]8[J] * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol Test Condition Speed Unit Note DDR400 DDR333 DDR266A DDR266B IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 720 640 560 560 mA IDD1 One bank; Active - Read - Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 800 800 720 720 mA IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 80 80 80 80 mA IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE= High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 480 400 320 320 mA IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 120 120 120 120 mA IDD3N /CS=HIGH; CKE=HIGH; One bank; Active-Pre- charge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 400 360 320 320 mA IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 1440 1280 1200 1200 mA IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle 1440 1280 1200 1200 mA IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; dis- tributed refresh 1200 1200 1120 1120 mA IDD6 CKE=<0.2V; External clock on; tCK =tCK(min) Normal 24 24 24 24 mA Low Power 12 12 12 12 mA IDD7 Four bank interleaving with BL=4 Refer to the fol- lowing page for detailed test condition 1840 1760 1600 1600 mA |
