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HYMD232646DP8-K Datasheet(PDF) 10 Page - Hynix Semiconductor |
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HYMD232646DP8-K Datasheet(HTML) 10 Page - Hynix Semiconductor |
10 / 30 page Rev. 1.2 / May. 2005 10 1184pin Unbuffered DDR SDRAM DIMMs IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) 128MB, 16M x 64 Unbuffered DIMM: HYMD232646D[P]6[J] * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol Test Condition Speed Unit Note DDR400 DDR333 DDR266A DDR266B IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 360 320 280 280 mA IDD1 One bank; Active - Read - Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 400 400 360 360 mA IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 40 40 40 40 mA IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE= High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 240 200 160 160 mA IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 60 60 60 60 mA IDD3N /CS=HIGH; CKE=HIGH; One bank; Active-Pre- charge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 200 180 160 160 mA IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 800 760 680 680 mA IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle 800 760 680 680 mA IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; dis- tributed refresh 600 600 560 560 mA IDD6 CKE=<0.2V; External clock on; tCK =tCK(min) Normal 12 12 12 12 mA Low Power 6 66 6 mA IDD7 Four bank interleaving with BL=4 Refer to the fol- lowing page for detailed test condition 1000 960 880 880 mA |
Similar Part No. - HYMD232646DP8-K |
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Similar Description - HYMD232646DP8-K |
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