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LTC3865EUHPBF Datasheet(PDF) 5 Page - Linear Technology |
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LTC3865EUHPBF Datasheet(HTML) 5 Page - Linear Technology |
5 / 36 page LTC3865/LTC3865-1 3865f Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3865E/LTC3865E-1 are guaranteed to meet performance specifications over the 0°C to 85°C operating junction temperature range. Specifications over the –40°C to 85°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3865I/LTC3865I-1 are guaranteed to meet performance specifications over the full –40°C to 125°C operating junction temperature range. Note that the maximum ambient temperature is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formulas: LTC3865UH: TJ = TA + (PD • 34°C/W) LTC3865FE: TJ = TA + (PD • 25°C/W) Note 4: The LTC3865/LTC3865-1 are tested in a feedback loop that servos VITH1,2 to a specified voltage and measures the resultant VOSENSE1,2. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See Applications Information. Note 6: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels. Note 7: The minimum on-time condition is specified for an inductor peak- to-peak ripple current 40% of IMAX (see Minimum On-Time Considerations in the Applications Information section). Note 8: VSENSE(MAX) defaults to 50mV for the LTC3865-1. elecTrical characTerisTics The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TJ = 25°C. VIN = 15V, VRUN1,2 = 5V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS BG RDOWN BG Driver Pull-Down On-Resistance BG Low 1.4 Ω TG1,2 tr TG1,2 tf TG Transition Time: Rise Time Fall Time (Note 6) CLOAD = 3300pF CLOAD = 3300pF 25 25 ns ns BG1,2 tr BG1,2 tf BG Transition Time: Rise Time Fall Time (Note 6) CLOAD = 3300pF CLOAD = 3300pF 25 25 ns ns TG/BG t1D Top Gate Off to Bottom Gate On Delay Synchronous Switch-On Delay Time CLOAD = 3300pF Each Driver 30 ns BG/TG t2D Bottom Gate Off to Top Gate On Delay Top Switch-On Delay Time CLOAD = 3300pF Each Driver 30 ns tON(MIN) Minimum On-Time (Note 7) 90 ns INTVCC Linear Regulator VINTVCC Internal VCC Voltage 6V < VIN < 38V 4.8 5.0 5.2 V VLDO INT INTVCC Load Regulation ICC = 0mA to 20mA 0.5 2 % VEXTVCC EXTVCC Switchover Voltage EXTVCC Ramping Positive l 4.5 4.7 V VLDO EXT EXTVCC Voltage Drop ICC = 20mA, VEXTVCC = 5V 50 100 mV VLDOHYS EXTVCC Hysteresis 200 mV Oscillator and Phase-Locked Loop fNOM Nominal Frequency RFREQ = 162k 450 500 550 kHz fLOW Lowest Frequency RFREQ = 0Ω 210 250 290 kHz fHIGH Highest Frequency RFREQ ≥ 325k 650 770 880 kHz RMODE/PLLIN MODE/PLLIN Input Resistance 250 kΩ IFREQ Frequency Setting Current 6.5 7.5 8.5 µA PGOOD OUTPUT VPGL PGOOD Voltage Low IPGOOD = 2mA 0.1 0.3 V IPGOOD PGOOD Leakage Current VPGOOD = 5V ±2 µA VPG PGOOD Trip Level VOSENSE with Respect to Set Regulated Voltage VID11 = VID12 = VID21 = VID22 = Float VOSENSE Ramping Negative VOSENSE Ramping Postitive –7 7 –10 10 –12.5 12.5 % % tPG PGOOD Bad Blanking Time Measured from VID Transitition Edge 100 µs |
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