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LTC4011CFEPBF Datasheet(PDF) 4 Page - Linear Technology |
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LTC4011CFEPBF Datasheet(HTML) 4 Page - Linear Technology |
4 / 26 page LTC4011 4011fb SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS TMAXC Maximum Fast Charge Temperature (Note 8) VTEMP Decreasing, Fast Charge ● 57 60 63 °C VTEMP(D) VTEMP Disable Threshold Voltage ● 2.8 3.3 V VTEMP(P) Pause Threshold Voltage ● 130 280 mV Charger Timing ∆tTIMER Internal Time Base Error ● –10 10 % ∆tMAX Programmable Timer Error RTIMER = 49.9k ● –20 20 % PowerPath Control VFR INFET Forward Regulation Voltage DCIN – VCC ● 15 55 100 mV VOL(INFET) Output Voltage Low VCC – INFET, No Load ● 3.75 5.2 7 V VOH(INFET) Output Voltage High VCC – INFET, No Load ● 0 50 mV tOFF(INFET) INFET OFF Delay Time CLOAD = 10nF, INFET to 50% 3 15 µs Status and Chemistry Select VOL Output Voltage Low (ILOAD = 10mA) VCDIV All Other Status Outputs ●● ● 435 300 700 600 mV mV ILKG Output Leakage Current All Status Outputs Inactive, VOUT = VCC ● –10 10 µA IIH(VCDIV) Input Current High VCDIV = VBAT (Shutdown) ● –1 1 µA VIL Input Voltage Low CHEM (NiMH) ● 900 mV VIH Input Voltage High CHEM (NiCd) ● 2.85 V IIL Input Current Low CHEM = GND ● –20 –5 µA IIH Input Current High CHEM = 3.3V ● –20 20 µA elecTrical characTerisTics The ● indicates specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, BAT = 4.8V, GND = PGND = 0V, unless otherwise noted. Note1:StressesbeyondthoselistedunderAbsoluteMaximumRatings maycausepermanentdamagetothedevice.ExposuretoanyAbsolute MaximumRatingconditionforextendedperiodsmayaffectdevice reliabilityandlifetime. Note2:TheLTC4011Cisguaranteedtomeetperformancespecifications from0°Cto70°C.Specificationsoverthe0°Cto85°Coperating temperaturerangeareassuredbydesign,characterizationandcorrelation withstatisticalprocesscontrols. Note3:OperatingjunctiontemperatureTJ(in°C)iscalculatedfrom theambienttemperatureTAandthetotalcontinuouspackagepower dissipationPD(inwatts)bytheformula: TJ=TA+θJA•PD RefertotheApplicationsInformationsectionfordetails.ThisICincludes overtemperatureprotectionthatisintendedtoprotectthedeviceduring momentaryoverloadconditions.Junctiontemperaturewillexceed125°C whenovertemperatureprotectionisactive.Continuousoperationabove thespecifiedmaximumoperatingjunctiontemperaturemayresultin devicedegradationorfailure. Note4:Allcurrentintodevicepinsispositive.Allcurrentoutofdevice pinsisnegative.AllvoltagesarereferencedtoGND,unlessotherwise specified. Note5:Theselimitsareguaranteedbycorrelationtowaferlevel measurements. Note6:Outputcurrentmaybelimitedbyinternalpowerdissipation.Refer totheApplicationsInformationsectionfordetails. Note7:EitherTGATEVOHmayapplyfor7.5V<VCC<9V. Note8:Theselimitsapplyspecificallytothethermistornetworkshownin Figure5intheApplicationsInformationsectionwiththevaluesspecified fora10kNTC( βof3750).LimitsarethenguaranteedbyspecificVTEMP voltagemeasurementsduringtest. |
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