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LTC3801 Datasheet(PDF) 10 Page - Linear Technology |
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LTC3801 Datasheet(HTML) 10 Page - Linear Technology |
10 / 12 page 10 LTC3801/LTC3801B sn3801 3801fs APPLICATIO S I FOR ATIO surface mount configurations. In the case of tantalum, it is critical that the capacitors are surge tested for use in switching power supplies. An excellent choice is the AVX TPS, AVX TPSV and KEMET T510 series of surface mount tantalum, available in case heights ranging from 2mm to 4mm. Other capacitor types include Sanyo OS-CON, Nichicon PL series and Panasonic SP. Setting Output Voltage The LTC3801/LTC3801B develop a 0.8V reference voltage between the feedback (Pin 3) terminal and ground (see Figure 4). By selecting resistor R1, a constant current is caused to flow through R1 and R2 to set the overall output voltage. The regulated output voltage is determined by: V R R OUT =+ 08 1 2 1 . For most applications, an 80k resistor is suggested for R1. In applications where low no-load quiescent current is critical, R1 should be made >400k to limit the feedback divider current to approximately 10% of the chip quiescent current. If R2 then results in a very high impedance, it may be beneficial to bypass R2 with a 5pF to 10pF capacitor. To prevent stray pickup, locate resistors R1 and R2 close to LTC3801/LTC3801B. Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in LTC3801/LTC3801B circuits: 1) LTC3801/ LTC3801B DC bias current, 2) MOSFET gate charge cur- rent, 3) I2R losses and 4) voltage drop of the output diode. 1. The VIN current is the DC supply current, given in the electrical characteristics, that excludes MOSFET driver and control currents. VIN current results in a small loss which increases with VIN. 2. MOSFET gate charge current results from switching the gate capacitance of the power MOSFET. Each time a MOSFET gate is switched from low to high to low again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is a current out of VIN which is typically much larger than the DC supply current. In continuous mode, IGATECHG = (f)(dQ). 3. I2R losses are predicted from the DC resistances of the MOSFET, inductor and current shunt. In continuous mode the average output current flows through L but is “chopped” between the P-channel MOSFET (in series with RSENSE) and the output diode. The MOSFET RDS(ON) plus RSENSE multipliedbydutycyclecanbesummedwith the resistances of L and RSENSE to obtain I2R losses. 4. The output diode is a major source of power loss at high currents and gets worse at high input voltages. The diode loss is calculated by multiplying the forward voltage times the diode duty cycle multiplied by the load current. For example, assuming a duty cycle of 50% with a Schottky diode forward voltage drop of 0.4V, the loss increases from 0.5% to 8% as the load current increases from 0.5A to 2A. 5. Transition losses apply to the external MOSFET and increase at higher operating frequencies and input voltages. Transition losses can be estimated from: Transition Loss = 2(VIN)2IO(MAX)CRSS(f) Other losses including CIN and COUT ESR dissipative losses, and inductor core losses, generally account for less than 2% total additional loss. Figure 4. Setting Output Voltage 3 VFB VOUT LTC3801/ LTC3801B R1 3801 F04 R2 Efficiency Considerations The efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Efficiency can be expressed as: Efficiency = 100% – ( η1 + η2 + η3 + ...) where η1, η2, etc. are the individual losses as a percent- age of input power. |
Similar Part No. - LTC3801_1 |
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Similar Description - LTC3801_1 |
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