We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.

Photodiode-Chip

16.05.2008

rev. 03

Wavelength range

Infrared

typ. dimensions in µm

Description

330 (

±20) µm

bond gold 1.0 µm

Applications

gold alloy, 0.5 µm

Miscellaneous Parameters

Symbol

Value

Unit

A

7.0

mm²

-40 to +125

°C

-40 to +125

°C

7.4

%/K

Optical and Electrical Characteristics

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward voltage

0.6

V

Breakdown voltage

2)

5

V

Sensitivity range at 10 %

λ

440

1710

nm

Spectral bandwidth at 50 %

∆

λ

0,5

680

nm

Responsivity at 1300 nm

1)

0.9

A/W

Dark current

5

30

nA

Shunt resistance

15

30

M

Noise equivalent power

λ = 1300 nm

NEP

5.2x10

-14

Specific detectivity

λ = 1300 nm

D*

5.1x10

12

Junction capacitance

1000

1300

pF

Labeling

Type

EPС-1300-3.0-2

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

T = -40…120°C

Storage temperature range

Active area

Operating temperature range

Broadband photodiode with

maximum response in the

NIR-region and enhanced

responsivity in the visible

range

typ. thickness

Optical communications,

safety equipment, light

barriers

Parameter

Test сonditions

anode (pin 1)

cathode (rear*)

*also pin 2, for measuring

purposes

Type

Planar

EPC-1300-3.0-2

Electrodes

P (anode) up

Technology

InGaAs/InP

Lot N°

Quantity

Hz

W/

1

W

Hz

cm

−

⋅

⋅

Ø3000

Ø200

Ø150

3350 ±20

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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