Photodiode-Chip

Preliminary

11.04.2007

rev. 03/07

Wavelength range

UV-blue-green

typ. dimensions (µm)

Description

300 µm

anode

cathode

Applications

Miscellaneous Parameters

Symbol

Value

Unit

A

10.9

mm²

7.0

%/K

-40 to +125

°C

-40 to +125

°C

Optical and Electrical Characteristics

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Dark current

20

80

pA

Peak sensitivity wavelength

λ

p

440

nm

Responsivity at

λ

0.17

A/W

Sensitivity range at 1%

λ

<110

570

nm

Spectral bandwidth at 50%

∆λ

0.5

180

nm

Dark resistance

50

70

G

Ω

Noise equivalent power

λ = 440 nm

NEP

1.5x10

-14

Junction capacitance

2.6

nF

)

1/130

ns

*Measured on bare chip on TO-18 header with EPIGAP equipment

Labeling

Type

EPC-440-3.6

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

High spectral sensitivity in

the blue and ultraviolet

range, low dark currents,

low cost chip with high

degradation stability

typ. thickness

special light barriers,

sensors for flame control

and automation

bond gold 1.0 µm

gold alloy, 0.5 µm

Type

Schottky Contact

EPC-440-3.6

Electrodes

P (anode) up

Technology

GaP

Lot N°

Quantity

Parameter

Test сonditions

Active area

Operating temperature range

Storage temperature range

3300

3500

3560

PD-06

Hz

W/

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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