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CLA4605-240 Datasheet(PDF) 5 Page - Skyworks Solutions Inc. |
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CLA4605-240 Datasheet(HTML) 5 Page - Skyworks Solutions Inc. |
5 / 12 page DATA SHEET • CLA SERIES DIODES Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com 200100I • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 28, 2009 5 0.25 0.50 0.75 1.00 –50 0 +50 +100 +150 Case Temperature (°C) Figure 5. Power Handling Capability vs Temperature Technical Description The CLA4603 and CLA4606 limiter diodes are constructed in a passivated flat-chip configuration and are available in a basic chip form or encapsulated in several Skyworks hermetic ceramic packages. Limiter diodes with lower capacitance values to 0.08 pF and constructed with a passivated mesa configuration are available in the CLA4601 and CLA4605 series. The mesa devices offer low capacitance and, therefore, broader bandwidth, lower loss, and faster response at reduced power. These diodes are also available in chip package form and represent the ultimate in limiter performance not approached by other manufacturers. The CLA4607 diodes (highest power) are available in both planar and mesa construction. Figures 6 and 7 illustrate the fundamental structures of diodes mounted in a 50 Ω microstrip circuit. Additional bonding and handling methods are contained in the Skyworks Application Notes, Waffle Pack Chip Carrier Handling/Opening Procedure (document #200146) and Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging (document #200146). Basic Applications In microstrip limiters, the bonding wire length and diameter together with the chip capacitance, form a low-pass filter (see Figure 8). Line lengths (X1 and X2) are varied to provide broadband matching and flat leakage characteristics. Typically, X1 and X2 are on the order of 0.1 wavelength. In Figure 9, the CLA4607 chip provides about 20 dB attenuation, reducing a 1 kW input signal to a 10 W output signal. The CLA4606 reduces this to 100 mW and the CLA4603 to about 20 mW. During the rise time of the incident pulse, the diodes behave in the following manner. The CLA4603, due to its thin I region, is the first to change to a low impedance. Experiments indicate that the CLA4603 reaches the 10 dB isolation point in about 1 ns and 20 dB in 1.5 ns with an incident power of 10 W. The CLA4606 takes about 4 ns and the CLA4607 about 50 ns to achieve 10 dB isolation. Consequently, the CLA4603 provides protection during the initial stages of pulse rise time with the thicker diodes progressively “turning on” as the power increases. With proper spacing (X1 and X2), the “on” diodes reflect high impedances to the upstream diodes, reducing the turn-on time for those diodes and ensuring that essentially all of the incident power is reflected by the input diode, preventing burnout of the thinner diodes. At the end of the pulse the process reverses and the diodes “recover” to their high impedance states; the free charge that was injected into their I regions by the high-incident power signal leaks off through the ground return and is also reduced by internal recombination. With a ground return, recovery time is on the order of 50 ns. With a high impedance return (for example, the circuit shown in Figure 10), the Schottky diode (such as the CDF7621-000) recovers or “opens” in practically zero time. Internal recombination on the order of several diode lifetimes is the only available mechanism for recovery of the limiter diodes. This recovery time can be long – on the order of 1 ms for the CLA4607 series. The shunt resistor (RR) minimizes the problem. One hundred Ohms approximately doubles the recovery time compared to a short circuit. When the Schottky diode is directly coupled to the transmission line in cascade after the coarse limiter, the leakage power is less than if a 0 Ω ground return were used. If the Schottky is decoupled too much, the leakage power increases due to the high DC impedance of a Schottky. Similarly, a 3 Ω ground return causes an increase of about 3 dB in leakage power compared to a 0 Ω return. |
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