We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.

LED - Lamp

15.11.2007

rev. 02

Radiation

Infrared

Note: Special packages with standoff available on request

Maximum Ratings

Symbol

Value

Unit

50

mA

100

mA

120

mW

-20 to +85

°C

-55 to +100

°C

Junction temperature

100

°C

Lead soldering temperature

260

°C

Optical and Electrical Characteristics

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward voltage

1.7

2.0

V

Forward voltage

1

2.0

V

Reverse voltage

5V

Radiant power

46

mW

Radiant power

1

14

mW

Radiant intensity

24

30

mW/sr

Radiant intensity

1

70

mW/sr

Peak wavelength

750

760

775

nm

Spectral bandwidth at 50%

30

nm

Viewing angle

ϕ

20

deg.

Switching time

35

ns

Note: All measurements carried out on EPIGAP equipment

< 5s, 3.0 mm from case

Power dissipation

Operating temperature range

Storage temperature range

Parameter

Forward current (DC)

Peak forward current

Test сonditions

Optical communications, safety equipment,

automation

ELD-760-324

Case

3 mm plastic lens

Technology

AlGaAs/AlGaAs

Type

DDH

Description

Applications

High-power, high-speed infrared LED with lens,

standard 3 mm package allows compact design,

housing without standoff leads

4,3

1,0

0,65

30,0

±1,0

1,5

Anode

Ø 3

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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