ELC-875-19-50 datasheet(1/1 Pages) EPIGAP

Part #	ELC-875-19-50

Description	LED - Chip

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Manufacturer	EPIGAP [EPIGAP optoelectronic GmbH]

Direct Link	http://www.epigap-berlin.com

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We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.

LED - Chip

14.11.2007

rev. 05

Radiation

Infrared

typ. dimensions (µm)

typ. thickness

cathode

anode

Maximum Ratings

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward current (DC)

IF

100

mA

Peak forward current

tP≤50 µs,

tP/T = 1/2

IFM

200

mA

Optical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward voltage

IF = 20 mA

VF

1.3

1.5

V

Forward voltage

IF = 100 mA

VF

1.5

1.9

V

Reverse voltage

IR = 10 µA

VR

5V

Radiant power*

IF = 20 mA

Φe

0.6

0.8

mW

Radiant power*

IF = 100 mA

Φe

4.0

5.5

mW

Peak wavelength

IF = 20 mA

λp

865

875

885

nm

Spectral bandwidth at 50%

IF = 20 mA

∆λ0.5

40

nm

Switching time

IF = 20 mA

tr, tf

16

ns

*Measured on bare chip on TO-18 header with EPIGAP equipment

Labeling

Type

Φe(typ) [mW]

VF(typ) [V]

ELС-875-19-50

Packing: Chips on adhesive film with wire-bond side on top

260 (±20) µm

gold alloy, 0.5 µm

gold alloy, 1.5 µm

Quantity

Lot N°

Type

Point Source

ELC-875-19-50

Electrodes

P (anode) up

Technology

AlGaAs/GaAs

570

180

PS-10

Ø150

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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