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TSM802 20V N-Channel MOSFET w/ESD Protected 2/6 Version: D08 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.6 0.8 1.0 V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±10 uA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 uA On-State Drain Current VDS =5V, VGS = 4.5V ID(ON) 30 -- -- A VGS = 4.5V, ID = 5A -- 18 25 VGS = 2.5V, ID = 4A -- 24 30 Drain-Source On-State Resistance VGS = 1.8V, ID = 2A RDS(ON) -- 39 65 mΩ Forward Transconductance VDS = 10V, ID = 4.5A gfs -- 30 -- S Diode Forward Voltage IS = 2A, VGS = 0V VSD -- 0.6 1.2 V Dynamic b Total Gate Charge Qg -- 15 20 Gate-Source Charge Qgs -- 3.4 -- Gate-Drain Charge VDS = 10V, ID = 4.5A, VGS = 4.5V Qgd -- 1.2 -- nC Input Capacitance Ciss -- 950 -- Output Capacitance Coss -- 450 -- Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz Crss -- 135 -- pF Switching c Turn-On Delay Time td(on) -- 140 200 Turn-On Rise Time tr -- 210 250 Turn-Off Delay Time td(off) -- 3700 4800 Turn-Off Fall Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω tf -- 2000 2600 nS Notes: a. pulse test: PW 300µS, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. |
