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TS13003MV Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13003MV Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TS13003MV High Voltage NPN Transistor 1/6 Version: G07 TO-92 PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Note: “G” is denote Halogen Free Product. Part No. Package Packing TS13003MVCT B0 TO-92 1Kpcs / Bulk TS13003MVCT A3 TO-92 2Kpcs / Ammo TS13003MVCT B0G TO-92 1Kpcs / Bulk TS13003MVCT A3G TO-92 2Kpcs / Ammo Block Diagram Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage (VBE=0) VCES 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V DC 1.5 Collector Current Pulse IC 3 A Total Power Dissipation Tc=25ºC PD 5.8 W Operating Junction Temperature TJ +150 ºC Operating Junction and Storage Temperature Range TSTG - 55 to +150 ºC Thermal Resistance Junction to Case RθJC 21.5 ºC/W Pin Definition: 1. Emitter 2. Collector 3. Base |
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