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BZT52C10 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BZT52C10 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page BZT52C2V4-BZT52C75 500mW, 5% Tolerance SMD Zener Diode Small Signal Diode VZ Tolerance Selection of ±5% Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Min Max Min Max Case : Flat lead SOD-123 small outline plastic package 1.5 1.7 0.059 0.067 3.3 3.7 0.130 0.146 0.5 0.7 0.020 0.028 2.5 2.7 0.098 0.106 0.8 1.0 0.031 0.039 0.05 0.2 0.002 0.008 Package SOD-123F Maximum Ratings IF=10mA Notes:1. Valid provided that electrodes are kept at ambient temperature VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM SOD-123F Maximum Ratings and Electrical Characteristics Features Mechanical Data Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Unit (mm) Wide zener voltage range selection : 2.4V to 75V Unit (inch) Dimensions Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Power Dissipation Symbol F High temperature soldering guaranteed: 260 °C/10s Polarity : Indicated by cathode band Weight : 8.85±0.5 mg A B C -65 to + 150 Value 500 Junction and Storage Temperature Range VF D E Ordering Information Part No. Packing BZT52Bxx RH 3Kpcs / 7" Reel Units PD mW Rating at 25°C ambient temperature unless otherwise specified. Type Number Zener I vs. V Characteristics V Thermal Resistance (Junction to Ambient) (Note 1) RθJA 350 °C/W Forward Voltage 1 TJ, TSTG °C Voltage Current IF VF VR IR VBR IZK VZ IZT VZM IZM Forward Region Leakage Region BreakdownRegion D A B C E F Version : A09 |
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