CYStech Electronics Corp.

Spec. No. : C901S6R

Issued Date : 2004.04.19

Revised Date :

Page No. : 1/6

HBNP45S6R

CYStek Product Specification

General Purpose NPN / PNP Epitaxial Planar Transistors

(dual transistors)

HBNP45S6R

Features

• Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

Equivalent Circuit

Limits

Parameter

Symbol

TR1 (NPN)

TR2 (PNP)

Unit

Collector-Base Voltage

60

-60

V

Collector-Emitter Voltage

50

-50

V

Emitter-Base Voltage

7

-6

V

Collector Current

150

-150

mA

Power Dissipation

Pd

200(total)

*1

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note: *1 150mW per element must not be exceeded.

SOT-363R

HBNP45S6R