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BTB1580M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1580M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2006.08.28 Page No. : 1/5 BTB1580M3 CYStek Product Specification PNP Epitaxial Planar Transistor BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Current (Pulse) ICP -6 (Note 1) A 0.6 W 1 (Note 2) W Power Dissipation Pd 2 (Note 3) W 208 °C/W 125 (Note 2) °C/W Thermal Resistance, Junction to Ambient RθJA 62.5 (Note 3) °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 1. Single Pulse Pw≦350μs, Duty≦2%. 3. When mounted on a ceramic board with area measuring 40×40×1mm. BTB1580M3 B C E 8k ≒ 60 ≒ SOT-89 ≒ 6K B C E B:Base C:Collector E:Emitter |
Similar Part No. - BTB1580M3_06 |
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Similar Description - BTB1580M3_06 |
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