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CHA5290 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA5290 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
2 / 6 page CHA5290 18-24GHz Medium Power Amplifier Ref. DSCHA52902295 -22-Oct.-02 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics Tamb = +25°C, Vd = 6V Id =400mA Symbol Parameter Min Typ Max Unit Fop Operating frequency range (1) 17.7 24 GHz G Small signal gain (1) 24 26 dB ∆G Small signal gain flatness (1) ±1 dB Is Reverse isolation 40 dB P1dB Pulsed output power at 1dB compression (1) 25 26 dBm P03 Output power at 3dB gain compression (1) 27 dBm PAE Power added efficiency at 1dB comp. 18 % VSWRin Input VSWR (2) 3:1 VSWRout Output VSWR (2) 3:1 Tj Junction temperature for 80°C backside 165 °C Id Bias current @ small signal 400 500 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=-2dBm 6.25 V Id Maximum drain bias current 625 mA Vg Gate bias voltage -2.5 to +0.4 V Ig Gate bias current -2.5 to +2.5 mA Vgd Minimum negative gate drain voltage ( Vg - Vd) -8 V Pin Maximum input power overdrive (2) 3 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +80 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. |
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