CHA5093

22-26GHz High Power Amplifier

Ref. : DSCHA50930129 -09 May-00

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = 6V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

22

26

GHz

G

Small signal gain (1)

18

20

dB

∆G

Small signal gain flatness (1)

±1.5

dB

Is

Reverse isolation (1)

50

dB

P1dB

Pulsed output power at 1dB compression (1)

28

29

dBm

P03

Output power at 3dB gain compression

29.5

dBm

IP3

3

40

dBm

PAE

Power added efficiency at 1dB comp.

19

%

VSWRin

Input VSWR

2.3:1

VSWRout

Output VSWR

2.3:1

Tj

Junction temperature for 80°C backside

170

°C

Id

Bias current

600

900

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

(2) Value representative for CW on jig measurement.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

6

V

Id

Drain bias current

1200

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Vgd

Negative gate drain voltage ( = Vg - Vd)

-8

V

Pin

Maximum peak input power overdrive (2)

+12

dBm

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.