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CHA2194 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA2194 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
2 / 10 page CHA2194 36-44GHz Low Noise Amplifier Ref : DSCHA21942035 -04-Feb.-02 2/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics Tamb = +25°C, Vd = +3,5V (On wafer) Symbol Parameter Min Typ Max Unit Fop Operating frequency range 36 44 Ghz G Gain (1) 17 19 dB ∆G Gain flatness (1) ± 0.5 ± 1 dB NF Noise figure (1) (freq: 36-40 GHz) 3 4 dB VSWRin Input VSWR (1) 2.5:1 3.0:1 VSWRout Ouput VSWR (1) 2:5:1 3.0:1 IP3 3rd order intercept point 20 dBm P1dB Output power at 1dB gain compression 8 10 dBm Id Drain bias current (2) 45 75 mA (1) These values are representative of wafer measurements without bonding wire at the RF ports. (2) This current is the typical value for low noise and low current consumption biasing : Vd=3.5V , Vg12 and Vg3 not connected. Absolute Maximum Ratings (3) Tamb = +25°C Symbol Parameter Values Unit Vd Vg Id Drain bias voltage (5) Vg12 and Vg3 max Drain current 4 +1 75 V V mA Pin Maximum peak input power overdrive (4) 15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options page 9 |
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