31

6

21

UCD7242

V

IN

Generator

V

V

GG

Thermal

Sense

T

MON

22

BP3

GND

32

25

18

26

BST-B

BSW-B

SW-B

12

10

11

PGND

I

FLT -B

SRE-B

PWM-B

8

Testmode

30

2

9

1

7

3

4

5

Current

Sense

Processor

20

28

29

27

19

Drive

Logic

13

Driver

Driver

BST-A

BSW-A

SW-A

24

23

14

Driver

Driver

I

FLT -A

SRE-A

PWM-A

Current

Sense

Processor

Drive

Logic

V

IN

V

IN

V

V

Short

15

16

PGND

17

UCD7242

SLUS962 – JANUARY 2010

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

DESCRIPTION (CONTINUED)

On-board comparators monitor the current through the high side switch to safeguard the power stage from

sudden high current loads. Blanking delay is set for the high side comparator to avoid false reports coincident

with switching edge noise. In the event of an over-current fault, the high-side FET is turned off and the Fault Flag

(FLT) is asserted to alert the controller.

MOSFET current is measured and monitored by a precision integrated current sense element. This method

provides an accuracy of ±5% over most of the load range. The amplified signal is available for use by the

If the die temperature exceeds 170°C, the temperature sensor initiates a thermal shutdown that halts output

switching and sets the FLT flag. Normal operation resumes when the die temperature falls below the thermal

hysteresis band.

Figure 1. Typical Application Circuit and Block Diagram

2

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Product Folder Link(s): UCD7242