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ZABG4002JA16TC Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZABG4002JA16TC Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 7 page ZABG4002 ZABG4002 Document number: DS32047 Rev. 1 - 2 1 of 7 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current. Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consumption, component cost and PCB area whilst enhancing overall reliability. Features • Four stage FET bias controller • Operating range of 3.0V to 8.0V • Low quiescent supply current, 1.2mA typical • FET drain voltages set at 2.0V • FET drain current selectable from 0 to 15mA • Switchable FETs for power management • Allows first and second stage FETs to be run at different (optimum) drain currents • FET drain voltages and currents held stable over temperature and Vcc variations • FETs protected against overstress during power-up and power-down. • Internal negative supply generator allowing single supply operation (available for external use) • Low external component count Pin Assignments Applications • Twin LNB’s • Quad LNB’s • US LNB’s • Microwave links • PMR and Cellular telephone systems Single Universal LNB System Diagram ZXHF 5002 ZABG 6002 ZXHF 5002 ZABG 4002 Gain stages GaAs FET’s Down Converter IF Switching, gain and control ZXHF 5002 ZABG 6002 ZXHF 5002 ZABG 4002 Gain stages GaAs FET’s Down Converter IF Switching, gain and control Top View Bottom View C SUB G2 V CC GND G3 D2 G4 R CAL1 D4 |
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