BLF645 datasheet(4/13 Pages) NXP

Part #	BLF645

Description	Broadband power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF645_1

Product data sheet

Rev. 01 — 27 January 2010

4 of 13

NXP Semiconductors

BLF645

Broadband power LDMOS transistor

8.

Test information

8.1 RF performance

The following figures are measured in a class-AB production test circuit.

8.1.1 1-Tone CW

VDS = 32 V; IDq = 900 mA (for total device);

f = 1300 MHz.

VDS = 32 V; f = 1300 MHz.

(1) IDq = 200 mA (for total device).

(2) IDq = 400 mA (for total device).

(3) IDq = 600 mA (for total device).

(4) IDq = 900 mA (for total device).

(5) IDq = 1200 mA (for total device).

(6) IDq = 1400 mA (for total device).

(7) IDq = 1800 mA (for total device).

Fig 1.

Power gain and drain efficiency as function of

load power; typical values

Fig 2.

Power gain as a function of load power;

typical values

PL (W)

0

160

120

40

80

001aal361

17

18

16

15

14

19

20

Gp

(dB)

13

40

50

30

20

10

60

70

ηD

(%)

0

ηD

Gp

PL (W)

0

160

120

40

80

001aal362

Gp

(dB)

16

14

18

20

12

17

15

19

13

(7)

(6)

(5)

(4)

(3)

(2)

(1)

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