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5

DC Characteristics for the TGF4112-EPU

DC probe Parameters

Nominal

Unit

IDSS

Drain Saturation Current

2940

mA

GM

Transconductance

1980

mS

VP

Pinch Off Voltage

-1.85

V

BVGS

Breakdown Voltage Gate-Source

-22

V

BVGD

Breakdown Voltage Gate-Drain

-22

V

0

50 0

100 0

150 0

200 0

250 0

300 0

0

1

2

3

4

5

6

7

8

9

D r a i n Vo lt age ( V )

Absolute Maximum Ratings

Drain-to-source Voltage, Vds..............................………………………………………… ..........12 V

Gate-to-source Voltage, Vgs..................………………………………………… .............-5 V to 0 V

Mounting

Temperature.................……………………………………… .… .........……………… 320°C

Storage Temperature.....................…………………………………… .… .............… -65°C to 200°C

Power Dissipation...........…………… .……………………………………… ...refer to Thermal Model

Operating Channel Temperature………………………………………… ..… .refer to Thermal Model

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended

periods of time may affect device reliability.

Example of DC I-V Curves

Vg = 0.0 V to -2.75 V in 0.25 steps T

C