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SKM300GA12E4 Datasheet(PDF) 1 Page - Semikron International |
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SKM300GA12E4 Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SKM300GA12E4 © by SEMIKRON Rev. 0 – 19.02.2009 1 SEMITRANS®4 GA IGBT4 Modules SKM300GA12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives •UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 422 A Tc =80°C 324 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 353 A Tc =80°C 264 A IFnom 300 A IFRM IFRM = 3xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1548 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =300 A VGE =15V chiplevel Tj =25°C 1.85 2.1 V Tj = 150 °C 2.25 2.45 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 3.5 4.0 mΩ Tj = 150 °C 5.2 5.5 mΩ VGE(th) VGE=VCE, IC =12mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 17.6 nF Coes f=1MHz 1.16 nF Cres f=1MHz 0.94 nF QG VGE =- 8 V...+ 15 V 1700 nC RGint Tj =25°C 2.5 Ω td(on) VCC = 600 V IC =300 A VGE =±15 V RG on =1.4 Ω RG off =1.5 Ω di/dton = 6100 A/µs di/dtoff = 3000 A/µs Tj = 150 °C 220 ns tr Tj = 150 °C 51 ns Eon Tj = 150 °C 23.4 mJ td(off) Tj = 150 °C 515 ns tf Tj = 150 °C 105 ns Eoff Tj = 150 °C 35 mJ Rth(j-c) per IGBT 0.11 K/W |
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