SKM100GB12T4_09 datasheet(2/5 Pages) SEMIKRON

Part #	SKM100GB12T4

Description	Fast IGBT4 Modules

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Manufacturer	SEMIKRON [Semikron International]

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2 / 5 page

SKM100GB12T4

2

Rev. 0 – 10.03.2009

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC

IF =100 A

VGE =0V

chip

Tj =25°C

2.2

2.52

V

Tj = 150 °C

2.15

2.47

V

VF0

Tj =25°C

1.3

1.5

V

Tj = 150 °C

0.9

1.1

V

rF

Tj =25°C

9.0

10.2

mΩ

Tj = 150 °C

12.5

13.7

mΩ

IRRM

IF =100 A

di/dtoff = 1600 A/µs

VGE =±15 V

VCC = 600 V

Tj = 150 °C

54

A

Qrr

Tj = 150 °C

15.7

µC

Err

Tj = 150 °C

5.9

mJ

Rth(j-c)

per diode

0.48

K/W

Module

LCE

30

nH

RCC'+EE'

terminal-chip

TC =25°C

0.65

mΩ

TC = 125 °C

1mΩ

Rth(c-s)

per module

0.04

0.05

K/W

Ms

to heat sink M6

3

5

Nm

Mt

to terminals M5

2.5

5

Nm

w

160

g

SEMITRANS®2

GB

Fast IGBT4 Modules

SKM100GB12T4

Features

• IGBT4 = 4. Generation (Trench)IGBT

• VCEsat with positive temperature

coefficient

• High short circuit capability, self

limiting to 6 x ICNOM

• Soft switching 4. Generation CAL

diode (CAL4)

Typical Applications

• AC inverter drives

•UPS

• Electronic welders at fsw up to 20 kHz

Remarks

• Case temperature limited to

Tc = 125°C max, recomm.

Top = -40 ... +150°C, product

rel. results valid for Tj = 150°

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SKM100GB12T4 Datasheet(PDF) 2 Page - Semikron International

SKM100GB12T4 Datasheet(HTML) 2 Page - Semikron International

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