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SEMIX754GB128DS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX754GB128DS Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SEMiX754GB128Ds © by SEMIKRON 03.04.2008 1 SEMiX®4s GB SPT IGBT Modules SEMiX754GB128Ds Preliminary Data Features • Homogeneous Si • SPT = Soft-Punch-Through technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives •UPS • Electronic welders up to 20 kHz Remarks Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150°C Tc = 25°C 680 A Tc = 80°C 482 A ICRM ICRM = 2xICnom 800 A VGES -20 ... 20 V tpsc VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150°C Tc = 25°C 562 A Tc = 80°C 385 A IFRM IFRM = 2xIFnom 800 A IFSM tp = 10ms, half sine wave, Tj =25°C 3100 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 60s 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) ICnom = 400A VGE = 15V chiplevel Tj = 25°C 1.9 2.35 V Tj = 125°C 2.10 2.55 V VCE0 Tj = 25°C 11.15 V Tj = 125°C 0.9 1.05 V rCE VGE = 15V Tj = 25°C 2.3 3.0 mΩ Tj = 125°C 3.0 3.8 mΩ VGE(th) VGE=VCE, IC = 16mA 4.5 5 6.5 V ICES VGE =0V VCE = 1200V Tj = 25°C 0.2 0.6 mA Tj = 125°C mA Cies VCE =25V VGE =0V f=1MHz 37.7 nF Coes f=1MHz 2.48 nF Cres f=1MHz 1.56 nF QG VGE =- 8 V...+ 15 V 3840 nC RGint Tj = 25°C 1.00 Ω td(on) VCC = 600V ICnom = 400A Tj = 125°C RG on =2.5Ω RG off =2.5Ω 180 ns tr 88 ns Eon 48 mJ td(off) 655 ns tf 120 ns Eoff 44 mJ Rth(j-c) per IGBT 0.05 K/W |
Similar Part No. - SEMIX754GB128DS_08 |
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Similar Description - SEMIX754GB128DS_08 |
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