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SEMIX201GD066HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX201GD066HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX201GD066HDs 2 Rev. 11 – 02.12.2008 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =200 A VGE =0V chiplevel Tj =25°C 1.4 1.6 V Tj = 150 °C 1.4 1.6 V VF0 Tj =25°C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V rF Tj =25°C 1.5 2.0 2.5 mΩ Tj = 150 °C 2.3 2.8 3.3 mΩ IRRM IF =200 A di/dtoff = 3900 A/µs VGE =-8 V VCC = 300 V Tj = 150 °C 200 A Qrr Tj = 150 °C 32 µC Err Tj = 150 °C 7.5 mJ Rth(j-c) per diode 0.28 K/W Rth(j-s) per diode K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 350 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX®13 GD Trench IGBT Modules SEMiX201GD066HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance |
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