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EM42BM3284LBA Datasheet(PDF) 10 Page - Eorex Corporation

Part # EM42BM3284LBA
Description  1Gb (8M횞4Bank횞32) Double DATA RATE SDRAM
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Manufacturer  EOREX [Eorex Corporation]
Direct Link  http://www.eorex.com
Logo EOREX - Eorex Corporation

EM42BM3284LBA Datasheet(HTML) 10 Page - Eorex Corporation

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eorex
EM42BM3284LBA
Feb. 2009
www.eorex.com
AC Operating Test Characteristics (Continued)
(VDD=1.8V±0.1V, TA=0°C ~70°C)
-6
-75
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tRPST
Read Postamble
0.4
0.6
0.4
0.6
tCK
tRAS
Active to Precharge command
period
42
120k
45
120k
ns
tRC
Active to Active command period
60
75
ns
tRFC
Auto Refresh Row Cycle Time
138
138
ns
tRCD
Active to Read or Write delay
30
30
ns
tRP
Precharge command period
22.5
22.5
ns
tRRD
Active bank A to B command period
12
15
ns
tCCD
Column address to column address
delay
1
1
tCK
tCDLR
Last data in to Read command
2.5 tCK- tDQSS
2.5 tCK- tDQSS
tCK
tHZP
Pre-charge command to high-Z
3
3
tCK
tCDLW
Last data in to Write command
1
1
tCK
tDPL
Last data in to Precharge command
3
3
tCK
tWTR
Internal Write to Read command
delay
2
1
tCK
tCKE
CKE minimum pulse width
2
2
tCK
tWPD
Write to pre-charge delay(same
bank)
4+
BL/2
3+
BL/2
tCK
tRPD
Read to pre-charge delay(same
bank)
BL/2
BL/2
tCK
tWRD
Write to Read command delay
3+
BL/2
2+
BL/2
tCK
tBSTW
Burst stop to write delay
3
3
tCK
tWR
Write recovery
15
15
ns
tXSNR
Exit self Refresh to non-read
command
120
120
ns
tXSRD
Exit self Refresh to read command
200
200
ns
tREFI
Average periodic refresh interval
7.8
7.8
us
10/24


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