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MRF8S9260HSR3 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # MRF8S9260HSR3
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF8S9260HSR3 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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MRF8S9260HR3 MRF8S9260HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
900
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 75 Watts Avg.
-1 1
-15
16
21
-43
42
40
38
-35
20.5
20
19
910
920
930
940
950
960
970
980
-33
-19
-2
0
-2.5
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
TWO-T ONE SPACING (MHz)
10
-60
-1 0
-2 0
-3 0
-5 0
1
100
-4 0
IM3-U
IM5-U
IM5-L
IM7-L
IM7-U
VDD = 28 Vdc, Pout = 250 W (PEP), IDQ = 1700 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-1
-3
-5
0
-2
-4
35
60
160
0
60
50
40
30
20
10
-1 dB = 64 W
ηD
-50
-20
-25
-30
-40
-35
-45
21
20
18
16
VDD = 28 Vdc, IDQ = 1700 mA, f = 940 MHz
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-2 dB = 88 W
-3 dB = 122 W
-9
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
85
110
ACPR
135
Gps
PARC
16.5
17
17.5
18
18.5
19.5
36
34
-37
-39
-41
-13
-17
-1.5
-1
-0.5
VDD = 28 Vdc, Pout = 75 W (Avg.)
IDQ = 1700 mA, Single-Carrier W-CDMA
19
17
15
Gps
ηD
IM3-L
IRL
PARC
ACPR


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