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MRF6VP11KHR6 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF6VP11KHR6 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 11 page MRF6VP11KHR6 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 26 dB Drain Efficiency — 71% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push-Pull Operation • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +110 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 °C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Case Temperature 67 °C, 1000 W CW, 100 MHz ZθJC RθJC 0.03 0.13 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data MRF6VP11KHR6 CASE 375D-05, STYLE 1 NI-1230 1.8-150 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET PART IS PUSH-PULL (Top View) RFoutA/VDSA 31 42 RFoutB/VDSB RFinA/VGSA RFinB/VGSB Figure 1. Pin Connections © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. |
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