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APTM100VDA35T3G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTM100VDA35T3G Datasheet(HTML) 5 Page - Microsemi Corporation |
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5 / 7 page  APTM100VDA35T3G www.microsemi.com 5 – 7 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID=11A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Maximum Safe Operating Area 10ms 1ms 100µs 1 10 100 1 10 100 1000 VDS, Drain to Source Voltage (V) limited by RDSon Single pulse TJ=150°C TC=25°C Ciss Crss Coss 100 1000 10000 100000 0 1020 3040 50 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VDS=200V VDS=500V VDS=800V 0 2 4 6 8 10 12 14 0 50 100 150 200 250 Gate Charge (nC) Gate Charge vs Gate to Source Voltage ID=22A TJ=25°C |
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