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1214-300V Datasheet(PDF) 1 Page - Microsemi Corporation |
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1214-300V Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page 1214-300V R1 MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55ST, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 420 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 75 Volts BVebo Emitter to Base Voltage 3.0 Volts Ic Collector Current 20 Amps Maximum Temperatures Storage Temperature - 65 to + 200oC Operating Junction Temperature + 200oC RF ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pg ηηηηc Rl Droop Flatness VSWR-S VSWR-T Power Out Power Gain Collector Efficiency Input Return loss Droop Flatness Load Mismatch Stability Load Mismatch Tolerance Freq = 1200 – 1400 MHz Vcc = 50 Volts Pin = 40 Watts Pulse Width = 330 µS Duty Factor = 10% 300 8.75 50 10 55 410 0.5 1. 0 1.5:1 2.5:1 Watts dB % dB dB dB Note: test @ 1.2, 1.3, and 1.4 GHz. FUNCTIONAL CHARACTERISTICS @ 25 °°°°C Bvces Ices θθθθjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 100 mA Vce = 50 Volts Rated Pulse Condition 75 10 0.29 Volts mA oC/W 1214-300V 300 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz |
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