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BSS51A Datasheet(PDF) 2 Page - Comset Semiconductor |
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BSS51A Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 3 page NPN BSS50A-51A-52A COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit IE= 0 ;VCB= 45V BSS50A IE= 0 ;VCB= 60V BSS51A ICBO Collector Cutoff Current IE= 0 ;VCB= 80V BSS52A - - 50 nA BSS50A BSS51A IEB0 Emitter Cutoff Current IC= 0 ;VEB=4 V BSS52A - - 700 µA IC=500 mA , IB=0.5 mA - - 1.3 IC=500 mA , IB=0.5 mA, Tj=200°C - - 1.3 IC=1 A, IB=1 mA - - 1.6 IC=1 A, IB=1 mA , Tj=200°C BSS51A - - 2.3 IC=1 A, IB=4 mA - - 1.6 VCE(SAT) Collector-Emitter saturation Voltage IC=1 A, IB=4 mA , Tj=200°C BSS50A BSS52A - - 1.6 IC=500 mA , IB=0.5 mA - - 1.9 IC=1 A, IB=1 mA BSS51A - - 2.2 VBE(SAT) Base-Emitter saturation Voltage IC=1 A, IB=4 mA BSS50A BSS52A - - 2.2 V BSS50A BSS51A IC=150 mA , VCE=10 V BSS52A 800 - - BSS50A BSS51A hFE DC Current Gain IC=500 mA , VCE=10 V BSS52A 2000 - - - BSS50A BSS51A hfe Small Signal Current Gain IC=500 mA , VCE=5 V f = 35 MHz BSS52A - 10 - - ton - 0.4 - toff Switching times ICon=500 mA IB1=-IB2=0.5 mA - 1.5 - µs ton - 0.4 - toff Switching times ICon=1 mA IB1=-IB2=1 mA - 1.5 - µs |
Similar Part No. - BSS51A |
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Similar Description - BSS51A |
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