BSS51A datasheet(2/3 Pages) COMSET

Part #	BSS51A

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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NPN BSS50A-51A-52A

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Mx

Unit

IE= 0 ;VCB= 45V

BSS50A

IE= 0 ;VCB= 60V

BSS51A

ICBO

Collector Cutoff Current

IE= 0 ;VCB= 80V

BSS52A

-

50

nA

BSS50A

BSS51A

IEB0

Emitter Cutoff Current

IC= 0 ;VEB=4 V

BSS52A

-

700

µA

IC=500 mA , IB=0.5 mA

-

1.3

IC=500 mA , IB=0.5 mA, Tj=200°C

-

1.3

IC=1 A, IB=1 mA

-

1.6

IC=1 A, IB=1 mA , Tj=200°C

BSS51A

-

2.3

IC=1 A, IB=4 mA

-

1.6

VCE(SAT)

Collector-Emitter saturation

Voltage

IC=1 A, IB=4 mA , Tj=200°C

BSS50A

BSS52A

-

1.6

IC=500 mA , IB=0.5 mA

-

1.9

IC=1 A, IB=1 mA

BSS51A

-

2.2

VBE(SAT)

Base-Emitter saturation

Voltage

IC=1 A, IB=4 mA

BSS50A

BSS52A

-

2.2

V

BSS50A

BSS51A

IC=150 mA , VCE=10 V

BSS52A

800

-

BSS50A

BSS51A

hFE

DC Current Gain

IC=500 mA , VCE=10 V

BSS52A

2000

-

BSS50A

BSS51A

hfe

Small Signal Current Gain

IC=500 mA , VCE=5 V

f = 35 MHz

BSS52A

-

10

-

ton

-

0.4

-

toff

Switching times

ICon=500 mA

IB1=-IB2=0.5 mA

-

1.5

-

µs

ton

-

0.4

-

toff

Switching times

ICon=1 mA

IB1=-IB2=1 mA

-

1.5

-

µs

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