BDX37 datasheet(2/4 Pages) COMSET

Part #	BDX37

Description	SILICON PLANAR EPITAXIAL POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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NPN BDX35 – BDX36 – BDX37

*

COMSET SEMICONDUCTORS

2

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

BDX35

BDX36

RthJ-mb

Thermal Resistance, Junction to mouting

base

BDX37

5

K/W

BDX35

BDX36

RthJ-a

Thermal Resistance, Junction to ambient

infree air

BDX37

100

K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

IE=0 ,

VCB=80 V

BDX35

-

10

IE=0 ,

VCB=100 V

BDX36

-

10

IE=0 ,

VCB=100 V

BDX37

-

10

IE=0 ,

VCB=80 V , Tj = 100°C BDX35

-

50

IE=0 ,

VCB=100 V,Tj = 100°C BDX36

-

50

ICBO

Collector cut-off current

IE=0 ,

VCB=100 V,Tj = 100°C BDX37

-

50

µA

BDX35

-

10

BDX36

-

10

IC=0, VEB=4 V

BDX37

-

10

µA

BDX35

-

1

BDX36

-

1

IEBO

Emitter cut-offcurrent

IC=0, VEB=5 V

BDX37

-

1

mA

BDX35

-

0,9

BDX36

-

0,7

IC=5.0 A, IB=500 mA

BDX37

-

0,9

BDX35

-

1,2

BDX36

-

IC=7.0 A, IB=700 mA

BDX37

-

1,2

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=10 A, IB=1A

BDX36

-

1,5

V

BDX35

BDX36

IC=5.0 A, IB=500 mA

BDX37

-

1 ,6

BDX35

-

2,0

IC=7.0 A, IB=700 mA

BDX37

-

2,0

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC=10 A, IB=1A

BDX36

-

2,5

V

BDX35

BDX36

BDX37

45

-

450

BDX35

BDX36

130

-

hFE

DC Current Gain (*)

VCE=10 V, IC=500m A

BDX37

-

80

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